any changing of specification will not be informed individual MMBT3904FW npn silicon general purpose transistor maximum r a tings rating symbol value unit collecto r emitte r v oltage v ceo 40 vdc collector base voltage v cbo 60 vdc emitter base voltage v ebo 6.0 vdc collector current e continuous i c 200 madc thermal characteristics characteristic symbol max unit total device dissipation fr5 board (1) t a = 25 c derate above 25 c p d 200 1.6 mw mw/ c thermal resistance junction to ambient (1) r ja 600 c/w total device dissipation (2) alumina substrate, (2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance junction to ambient (2) r ja 400 c/w junction and storage temperature t j , t stg 55 to +150 c device marking MMBT3904FW = 1n, am electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector emitter breakdown voltage (3) (i c = 1.0 madc, i b = 0) v (br)ceo 40 e vdc collector base breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 60 e vdc emitter base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 6.0 e vdc base cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) i bl e 50 nadc collector cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) i cex e 50 nadc 1.fr4 = minimum pad 2.alumina = 1.0 1.0 inch pad. epitaxial planar die construction complementary pnp type available (mmbt3906fw) ideal for medium power amplification and switching features collec t or 3 1 base 2 emitter dim min max a 1.500 1.700 b 0.750 0.850 c 0.700 0.900 d 0.250 0.35 0 g 0.900 1.100 h 0.000 0.100 j 0.100 0.200 k 0.220 0.500 l 0.400 0.600 s 1.500 1.700 v 0.200 0.400 all dimension in mm sot-523 k j c h l a b s gv d top view http://www.secosgmbh.com elektronische bauelemente sot- 5 23 1 2 3 r o h s c o m p l i a n t p r o d u c t 01 -jun-2002 rev. a page 1 of 6
any changing of specification will not be informed individual MMBT3904FW npn silicon general purpose transistor electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics (3) dc current gain (1) (i c = 0.1 madc, v ce = 1.0 vdc) (i c = 1.0 madc, v ce = 1.0 vdc) (i c = 10 madc, v ce = 1.0 vdc) (i c = 50 madc, v ce = 1.0 vdc) (i c = 100 madc, v ce = 1.0 vdc) h fe 40 70 100 60 30 e e 300 e e e collector emitter saturation voltage (3) (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc) v ce(sat) e e 0.2 0.3 vdc base emitter saturation voltage (3) (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc) v be(sat) 0.65 e 0.85 0.95 vdc small signal characteristics current gain e bandwidth product (i c = 10 madc, v ce = 20 vdc, f = 100 mhz) f t 300 e mhz output capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) c obo e 4.0 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo e 8.0 pf input impedance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h ie 1.0 10 k ohms voltage feedback ratio (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h re 0.5 8.0 x 10 4 small signal current gain (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h fe 100 400 e output admittance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h oe 1.0 40 mhos noise figure (v ce = 5.0 vdc, i c = 100 adc, r s = 1.0 k ohms, f = 1.0 khz) nf e 5.0 db switching characteristics delay time (v cc = 3.0 vdc, v be = 0.5 vdc, t d e 35 ns rise time ( cc , be , i c = 10 madc, i b1 = 1.0 madc) t r e 35 ns storage time (v cc = 3.0 vdc, t s e 200 ns fall time ( cc , i c = 10 madc, i b1 = i b2 = 1.0 madc) t f e 50 ns 3. pulse test: pulse width 300 s, duty cycle 2.0%. http://www.secosgmbh.com elektronische bauelemente 01 -jun-2002 rev. a page 2 of 6
any changing of specification will not be informed individual MMBT3904FW npn silicon general purpose transistor figure 1. delay and rise time equivalent test circuit figure 2. storage and fall time equivalent test circuit +3 v 275 10 k 1n916 c s < 4 pf* +3 v 275 10 k c s < 4 pf* < 1 ns 0.5 v +10.9 v 300 ns d uty c ycle = 2% < 1 ns 9.1 v +10.9 v d uty c ycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors typical transient characteristics figure 3. capacitance r everse b ias v oltage (v) 2.0 3.0 5.0 7.0 10 1.0 0.1 figure 4. charge data i c , c ollector c urrent (ma) 5000 1.0 v cc = 40 v i c /i b = 10 q, c harge (pc) 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 c apacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 q t q a c ibo c obo t j = 25 c t j = 125 c http://www.secosgmbh.com elektronische bauelemente 01 -jun-2002 rev. a page 3 of 6
any changing of specification will not be informed individual MMBT3904FW npn silicon general purpose transistor http://www.secosgmbh.com elektronische bauelemente figure 5. turn on time i c , c ollector c urrent (ma) 70 100 200 300 500 50 figure 6. rise time i c , c ollector c urrent (ma) t ime (ns) 1.0 2.0 3.0 10 20 70 5 100 t , r ise t ime (ns) figure 7. storage time i c , c ollector c urrent (ma) figure 8. fall time i c , c ollector c urrent (ma) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 r t , f all t ime (ns) f t , s torage t ime (ns) s v cc = 40 v i c /i b = 10 v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v i c /i b = 10 i c /i b = 20 i c /i b = 10 i c /i b = 20 t s = t s 1 / 8 t f i b1 = i b2 typical audio small signal characteristics noise figure variations (v ce = 5.0 vdc, t a = 25 c, bandwidth = 1.0 hz) figure 9. f, f requency (khz) 4 6 8 10 12 2 0.1 figure 10. r s , s ource r esistance (k ohms) 0 n f , n oise f igure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4 6 8 10 12 2 14 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 n f , n oise f igure (db) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance = 200 i c = 1.0 ma source resistance = 200 i c = 0.5 ma source resistance = 500 i c = 100 a source resistance = 1.0 k i c = 50 a 01 -jun-2002 rev. a page 4 of 6
any changing of specification will not be informed individual MMBT3904FW npn silicon general purpose transistor h parameters (v ce = 10 vdc, f = 1.0 khz, t a = 25 c) figure 11. current gain i c , c ollector c urrent (ma) 70 100 200 300 50 figure 12. output admittance i c , c ollector c urrent (ma) h , c urrent g ain h , o utput a dmittance ( mhos) figure 13. input impedance i c , c ollector c urrent (ma) figure 14. voltage feedback ratio i c , collector current (ma) 30 100 50 5 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , v oltage f eeback r atio (x 10 ) re h , i nput i mpedance (k ohms) ie 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 2 1 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 fe 4 typical static characteristics figure 15. dc current gain i c , collector current (ma) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h , dc c urrent g ain (n ormalized ) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.00.7 200 30205.0 7.0 fe v ce = 1.0 v t j = +125 c +25 c 55 c http://www.secosgmbh.com elektronische bauelemente 01 -jun-2002 rev. a page 5 of 6
any changing of specification will not be informed individual MMBT3904FW npn silicon general purpose transistor figure 16. collector saturation region i b , b ase c urrent (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , c ollector e mitter v oltage (v) 0.5 2.0 3.0 10 0.2 0.3 0 1.00.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.070.050.030.020.01 10 ma 30 ma 100 ma figure 17. aono voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 1.2 0.2 figure 18. temperature coefficients i c , collector current (ma) v , v oltage (v) 1.0 2.0 5.0 10 20 50 0 100 0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 c oefficient (mv/ c) 200 1.0 1.5 2.0 200 t j = 25 c v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be @ v ce =1.0 v +25 c to +125 c 55 c to +25 c +25 c to +125 c 55 c to +25 c vc for v ce(sat) vb for v be(sat) http://www.secosgmbh.com elektronische bauelemente 01 -jun-2002 rev. a page 6 of 6
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